PM400DVA060 Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – FLAT-BASE TYPE INSULATED PACKAGE

MITSUBISHI INTELLIGENT POWER MODULES
PM400DVA060
FLAT-BASE TYPE
INSULATED PACKAGE
Electrical and Mechanical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ. Max.
Units
IGBT Inverter Sector
Collector-Emitter Cutoff Current
FWDi Forward Voltage
Collector-Emitter Saturation Voltage
Inductive Load Switching Times
Thermal Characteristics
Characteristic
Junction to Case Thermal Resistance
Contact Thermal Resistance
I_CES
V_EC
V_CE(sat)
t_on
t_rr
t_C(on)
t_off
t_C(off)
Symbol
R_th(j-c)Q
R_th(j-c)F
R_th(c-f)
V_CE = V_CES, V_D = 15V, T_j = 25°C
—
V_CE = V_CES, V_D = 15V, T_j = 125°C
—
-I_C = 400A, V_D = 15V, V_CIN = 5V
—
V_D = 15V, V_CIN = 0V, I_C = 400A,
—
Pulsed, T_j = 25°C
V_D = 15V, V_CIN = 0V, I_C = 400A,
—
Pulsed, T_j = 125°C
0.5
V_D = 15V, V_CIN = 0 ↔ 5V
—
V_CC = 300V, I_C = 400A,
—
T_j = 125°C
—
—
—
1.0
mA
—
10.0
mA
2.20 3.30 Volts
2.35 2.80 Volts
2.55 3.05 Volts
1.4
2.5
µs
0.15
0.3
µs
0.4
1.0
µs
2.0
3.0
µs
0.5
1.0
µs
Condition
Each Inverter IGBT
Each Inverter FWDi
Case to Fin Per Module,
Thermal Grease Applied
Min.
Typ. Max. Units
—
—
0.11 °C/Watt
—
—
0.18 °C/Watt
—
—
0.081 °C/Watt
Recommended Conditions for Use
Characteristic
Symbol
Condition
Supply Voltage
V_CC
Applied across C1-E2 Terminals
V_CE(surge) Applied across C1-E1, C2-E2 Terminals
V_D
Applied between
V_P1-V_PC, V_N1-V_{NC *}
Input ON Voltage
V_CIN(on)
Applied between
Input OFF Voltage
V_CIN(off)
C_P1-V_PC, C_N1-V_NC
Arm Shoot-Through Blocking Time
t_DEAD
For IPM's each Input Signal
* With ripple satisfying the following conditions, dv/dt swing ≤ 5V/µs, Variation ≤ 2V peak to peak.
Value
≤ 400
≤ 500
15 ± 1.5
Units
Volts
Volts
Volts
≤ 0.8
≥ 4.0
≥ 3.5
Volts
Volts
µs
Sep.1998