M63836FP Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE

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MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63836FP/KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
DC Amplification Factor
Collector Current Characteristics
10⁵
7 _VCE=2V
5
3
2
10⁴
7
5
3
2
10³
7
5
3
2
Ta=85°C
Ta=–40°C
Ta=25°C
10²_{101 2 3 5 7 102 2 3 5 7 103}
Collector current IC (mA)
–0.6
–0.5
Input Characteristics
VCC=3V
–0.4
–0.3
–0.2
–0.1
0
0
Ta=85°C
Ta=25°C
Ta=–40°C
1
2
3
Input voltage Vcc-VI (V)
Clamping Diode Characteristics
500
400
300
200
100
Ta=85°C
Ta=25°C
Ta=–40°C
0
0
0.5
1.0
1.5
2.0
Forward bias voltage VF (V)
Output Current Characteristics
500
VCE=2V
400
Ta=85°C
300
Ta=25°C
200
Ta=–40°C
100
0
0
0.4 0.8 1.2 1.6 2.0
Input voltage Vcc-VI (V)
20.0
Driver Supply Characteristics
VI=0.5V
16.0
12.0
8.0
Ta=25°C
Ta=–40°C
4.0
0
0
Ta=85°C
2
4
6
8
10
Supply voltage Vcc (V)
Sep. 2001