FS40SM-6 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
20
Tch = 25°C
ID = 40A
16
VDS = 50V
12
100V
200V
8
4
0
0
40 80 120 160 200
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FS40SM-6
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
50
TC=125°C
VGS = 0V
Pulse Test
40
25°C
30
75°C
20
10
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
7 VGS = 10V
5 ^{ID = 1/2ID}
Pulse Test
3
2
10⁰
7
5
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10¹
7
5
3
2
10⁰
7
5
D=1
3 0.5
2
PDM
0.2
10^–1
7 ^0.1
5
3
2
0.05
0.02
0.01
tw
T
D=
tw
T
10^–2
Single Pulse
10^–42 3 5710^–32 3 5710^–22 3 5710^–12 3 5710⁰ 2 3 5710¹ 2 3 5710²
PULSE WIDTH tw (s)
Feb.1999