FS22SM-12A Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
20
16
VDS =
100V
200V
12
400V
8
4
TCh = 25°C
ID = 22A
0
0
80 160 240 320 400
GATE CHARGE Qg (nC)
MITSUBISHI Nch POWER MOSFET
FS22SM-12A
HIGH-SPEED SWITCHING USE
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
40
VGS = 0V
Pulse Test
32
TC =
25°C
24
75°C
125°C
16
8
0
0 0.8 1.6 2.4 3.2 4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
VGS = 10V
7 _{ID = 11A}
5 _{Pulse Test}
3
2
10⁰
7
5
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10¹
7
5
3
2
10⁰
7
D = 1.0
5
= 0.5
3
2
= 0.2
PDM
10^–1
7
5
3
2
= 0.1
= 0.05
= 0.02
tw
T
D= ^tw
T
Single Pulse
= 0.01
10^–2
10^–42 3
5 710^–32 3
5 710^–22 3
5 710^–12 3
5 7 10⁰ 2 3
5 7 10¹ 2 3
5 7 10²
PULSE WIDTH tw (s)
Sep. 2001