FG4000BX-90DA Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER INVERTER USE PRESS PACK TYPE

TURN OFF TIME, TURN OFF STORAGE TIME
VS. TURN OFF CURRENT
(TYPICAL)
30
VD = 2250V
VDM = 4500V
diGQ/dt = –40A/µs
25 _{VRG = 17V}
tgq
CS = 3.0µF
LS = 0.25µH
20 Tj = 125°C
ts
15
10
5
500 1100 1700 2300 2900 3500
TURN OFF CURRENT (A)
TURN OFF GATE CURRENT
VS. TURN OFF CURRENT
(TYPICAL)
1000
VD = 2250V
VDM = 4500V
800
diGQ/dt = –40A/µs
VRG = 17V
CS = 3.0µF
LS = 0.25µH
600 Tj = 125°C
400
200
0
500 1000 1500 2000 2500 3000
TURN OFF CURRENT (A)
TURN ON SWITCHING ENERGY
(MAXIMUM)
4.0
VD = 2250V
3.5
IGM = 25A
diG/dt = 10A/µs
3.0
CS = 3.0µF
RS = 5Ω
diT/dt = 500A/µs
300A/µs
2.5 ^{Tj = 125°C}
2.0
1.5
100A/µs
1.0
0.5
0
500
1000 1500 2000 2500 3000
TURN ON CURRENT (A)
MITSUBISHI GATE TURN-OFF THYRISTORS
FG4000BX-90DA
HIGH POWER INVERTER USE
PRESS PACK TYPE
TURN OFF TIME, TURN OFF STORAGE TIME
VS. RATE OF RISE OF TURN OFF GATE CURRENT
(TYPICAL)
50
45
40
35
30
25
tgq
20 ^{VD = 2250V}
VDM = 4500V
15 _{IT = 3000A}
10
VRG = 17V
CS = 3.0µF
ts
5 ^{LS = 0.25µH}
Tj = 125°C
0
0 10 20 30 40 50 60 70 80 90 100
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF GATE CURRENT VS.
RATE OF RISE OF GATE CURRENT
(TYPICAL)
1000
800
600
400
200
0
0
VD = 2250V
VDM = 4500V
IT = 3000A
VRG = 17V
CS = 3.0µF
LS = 0.25µH
Tj = 125°C
20 40 60 80 100
RATE OF RISE OF TURN OFF GATE CURRENT (A/µS)
TURN OFF SWITCHING ENERGY
(MAXIMUM)
10
VD = 2250V
9 VDM = 4500V
8
diGQ/dt = –40A/µs
VRG = 19V
7 ^{CS = 3.0µF}
LS = 0.25µH
6 Tj = 125°C
5
4
3
2
1
0
500 1000 1500 2000 2500 3000
TURN OFF CURRENT (A)
Aug.1998