CM75DU-12F Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – Trench Gate Design Dual IGBTMOD™ 75 Amperes/600 Volts

REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10²
7
5
3
trr
2
Irr
10¹
7
5
3
2
10⁰₁₀₀
2 3 5 7 10¹
Conditions:
VCC = 300V
VGE = ±15V
RG = 8.3Ω
Tj = 25°C
2 3 5 7 10²
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
18 IC = 75A
16
VCC = 200V
14
VCC = 300V
12
10
8
6
4
2
0
0 100 200 300 400 500 600 700
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM75DU-12F
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10^–32 3 5 710^–22 3 5 710^–12 3 5 710⁰ 2 3 5 7 10¹
10¹
7
5
IGBT part:
Per unit base = Rth(j–c) = 0.43°C/ W
3
2
FWDi part:
Per unit base = Rth(j–c) = 0.9°C/ W
10⁰
7
5
3
3
2
2
10^–1
7
5
10^–1
7
5
3
3
2
2
10^–2
7
5
3
2
10^–3
Single Pulse
TC = 25°C
10^–2
7
5
3
2
10^–3
10^–52 3 5 710^–42 3 5 710^–3
TMIE (s)
Sep.2000