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CM600HU-12F_09 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE | |||
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REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
5
3
2
102 1
7
5
3
2
101
101
trr
Irr
2 3 5 7 102
Conditions:
VCC = 300V
VGE = ±15V
RG = 3.1â¦
Tj = 25°C
2 3 5 7 103
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 600A
18
16
VCC = 200V
14
12
VCC = 300V
10
8
6
4
2
0
0 1000 2000 3000 4000 5000
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM600HU-12F
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10â3
101
2
3
5 710â22 3
5 710â12 3
5 7100
23
5 7 101
7
5
IGBT part:
Per unit base = Rth(jâc) = 0.088K/ W
3 FWDi part:
2 Per unit base = Rth(jâc) = 0.12K/ W
100
7
5
3
3
2
2
10â1
7
5
10â1
7
5
3
3
2
2
10â2
7
5
3
2
10â3
Single Pulse
TC = 25°C
10â2
7
5
3
2
10â3
10â52 3 5 710â42 3 5 710â3
TIME (s)
Feb. 2009
4
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