|
CM600DY-12NF_03 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
|
◁ |
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
5
3
2
Irr
102
7
5
3
2
101
101
23
5 7 102
trr
Conditions:
VCC = 300V
VGE = ±15V
RG = 4.2â¦
Tj = 25°C
Inductive load
2 3 5 7 103
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 600A
VCC = 200V
16
VCC = 300V
12
8
4
0
0
1000
2000
3000
500
1500
2500
3500
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM600DY-12NF
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10â32 3 5 710â22 3 5 710â12 3 5 7100 2 3 5 7 101
100
7
5
Single Pulse
3
TC = 25°C
2
10â1
7
5
10â1
7
5
3
3
2
2
IGBT part:
10â2 Per unit base =
10â2
7
5
Rth(jâc) = 0.11°C/W
7
5
FWDi part:
3
2
Per unit base =
Rth(jâc) = 0.18°C/W
3
2
10â3
10â3
10â52 3 5 710â42 3 5 710â3
TMIE (s)
Mar.2003
|