CM400DU-24F Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – Dual IGBTMOD 400 Amperes/1200 Volts

REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10³
7 ^Conditions:
VCC = 600V
5 _{VGE = ±15V}
3
RG = 3.1Ω
Tj = 25°C
2 Inductive load
trr
10^{2 1}
Irr
7
5
3
2
10¹_{101 2 3 5 7 102 2 3 5 7 103}
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 400A
18
16
VCC = 400V
14
VCC = 600V
12
10
8
6
4
2
0
0 1000 2000 3000 4000 5000 6000
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM400DU-24F
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10^–52 3 5 710^–42 3 5 710^–32 3 5 710^–2 2 3 5 7 10^–1
10⁰
7
IGBT part:
5
3
Per unit base = Rth(j–c)
= 0.11°C/W
FWDi part:
2 Per unit base = Rth(j–c)
= 0.13°C/W
10^–1
7
5
3
3
2
2
10^–2
7
5
3
2
10^–3
Single Pulse
TC = 25°C
10⁰
7
5
3
2
10^–12 3 5 710⁰ 2 3 5 7 10¹
TMIE (s)
Sep. 2001