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CM300DY-34A_09 Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE | |||
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HALF-BRIDGE
SWITCHING CHARACTERISTICS
SWITCHING TIME vs. COLLECTOR CURRENT
(TYPICAL)
104
7
5
3
2
td(off)
103
td(on)
7
5
tf
3
2
102
7
5
3
2
1011 01
tr
23
5 7 102
Conditions:
VCC = 1000V
VGE = ±15V
RG = 1.6â¦
Tj = 125°C
Inductive load
2 3 5 7 103
COLLECTOR CURRENT IC (A)
SWITCHING LOSS vs.
COLLECTOR CURRENT
(TYPICAL)
103
7 Conditions:
5 VCC = 1000V
3 VGE = ±15V
2 RG = 1.6â¦
Eon
102 Tj = 125°C
7 Inductive load
Eoff
5
3
2
Err
101
7
5
3
2
1010 01 2 3 5 7 102 2 3 5 7 103
COLLECTOR CURRENT IC (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
5
3
trr
2
102
7
5
3
2
101101
23
5 7 102
Irr
Conditions:
VCC = 1000V
VGE = ±15V
RG = 1.6â¦
Tj = 25°C
Inductive load
2 3 5 7 103
EMITTER CURRENT IC (A)
4
MITSUBISHI IGBT MODULES
CM300DY-34A
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
SWITCHING TIME vs. GATE RESISTANCE
(TYPICAL)
104
7
5
3
2
td(on)
td(off)
103
7
tr
5
3
2
102
7
5
3
2
1011 00
23
5 7 101
tf
Conditions:
VCC = 1000V
VGE = ±15V
IC = 300A
Tj = 125°C
Inductive load
2 3 5 7 102
GATE RESISTANCE RG (â¦)
SWITCHING LOSS vs.
GATE RESISTANCE
(TYPICAL)
103
7
5
3
Eon
2
102
7
5
3 Conditions:
2
VCC = 1000V
VGE = ±15V
IC = 300A
1011 00 2 3 5
Eoff
Err
Tj = 125°C
Inductive load
7 101 2 3 5
7 102
GATE RESISTANCE RG (â¦)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
100
7
5
3
2
10â1
7
5
3
2
Single Pulse
Tc= 25°C
Tc measured point is
just under the chips
10â2
7
5 IGBT part:
3 Per unit base = Rth(jâc) = 0.043K/W
2 FWDi part:
Per unit base = Rth(jâc) = 0.072K/ W
10â3
10â52 3 5710â42 3 5710â32 3 5710â22 3 5710â12 3 57100 2 3 57101
TIME (s)
Feb. 2009
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