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CM300DY-24NF Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE
◁
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
5
3
2
102
7
5
3
2
101
101
23
5 7 102
Irr
trr
Conditions:
VCC = 600V
VGE = ±15V
RG = 1.0Ω
Tj = 25°C
Inductive load
2 3 5 7 103
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 300A
16
VCC = 400V
VCC = 600V
12
8
4
0
0 500 1000 1500 2000 2500 3000
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM300DY-24NF
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
100
7
5
Single Pulse
3
TC = 25°C
2
10–1
7
5
10–1
7
5
3
3
2
2
IGBT part:
10–2 Per unit base =
10–2
7
5
Rth(j–c) = 0.11°C/W
7
5
FWDi part:
3
2
Per unit base =
Rth(j–c) = 0.18°C/W
3
2
10–3
10–3
10–52 3 5 710–42 3 5 710–3
TMIE (s)
Mar.2003