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CM20AD05-12H Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – MITSUBISHI IGBT MODULES | |||
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THYRISTOR PART
Symbol
Parameter
Test conditions
IDRM
IRRM
ITM
IGT
VGT
dv/dt
IH
Rth(j-c)
Repetitive peak off-state current
Repetitive peak reverse current
On-state voltage
Gate trigger current
Gate trigger voltage
VD=800V
VR=800V
IT=20A, instantaneous means
VD=6V, IT=1A
VD=6V, IT=1A
Critical rate of rise of off-state
Voltage
Tj=125°C, VD=540V, exp. waveform
Holding current
Thermal resistance
MITSUBISHI IGBT MODULES
CM20AD00-12H
MEDIUM POWER SWITCHING USE
FLAT BASE, INSULATED TYPE
Limits
Min.
Typ.
Max. Unit
â
â
1
mA
â
â
1
mA
â
â
1.55
V
â
â
50
mA
â
â
3
V
500
â
â
V/µs
â
50
â
mA
â
â
1.75 °C/W
THERMISTOR PART
Symbol
Parameter
RTH
Resistance
B
B Constant
Test conditions
TC = 25°C
Resistance at 25°C, 50°C
Limits
Min.
Typ.
Max. Unit
â
100
â
kâ¦
(Note.5) â
4000
â
K
RESISTOR PART
Symbol
Parameter
R
â
Resistance
Temperature coefficient
Test conditions
Measured between N-N1
Limits
Unit
Min. Typ. Max.
â
3.4
â
mâ¦
â
0.079
â %/°C
COMMON RATING
Symbol
Parameter
Test conditions
Min.
Rth(c-f)
Contact thermal resistance
Case to fin, Thermal compound applied*1 (1 module)
â
Note. 1 IE, VEC, trr, Qrr, diE/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode.
2 Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3 Junction temperature (Tj) should not increase beyond 150°C.
4 Pulse width and repetition rate should be such as to cause negligible temperature rise.
5 B = (InR1-InR2)/(1/T1-1/T2)
R1 : Resistance at T1(K)
R2 : Resistance at T2(K)
*1 : Typical value is measured by using Shin-etsu Silicone âG-746â.
Limits
Typ.
0.05
Max.
â
Unit
°C/W
Sep. 2000
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