CM200DU-12NFH_09 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10³
7
5
3
2
10²
7 _trr
5
Irr
3
2
10¹_{101 2 3}
5 7 10²
Conditions:
VCC = 300V
VGE = ±15V
RG = 6.3Ω
Tj = 25°C
Inductive load
2 3 5 7 10³
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10^–32 3 5 710^–22 3 5 710^–12 3 5 710⁰ 2 3 5 7 10¹
10⁰
7
5
Single Pulse
3
TC = 25°C
2
10^–1
7
5
3
2
10^–1
7
5
3
2
10^–2
7
5
3
2
Per unit base =
Rth(j–c) = 0.35K/W
10^–3
10^–2
7
5
3
2
10^–3
10^–52 3 5 710^–42 3 5 710^–3
TIME (s)
MITSUBISHI IGBT MODULES
CM200DU-12NFH
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part )
10^–32 3 5 710^–22 3 5 710^–12 3 5 710⁰ 2 3 5 7 10¹
10⁰
7
5
Single Pulse
3
TC = 25°C
2
10^–1
7
5
3
2
10^–1
7
5
3
2
10^–2
7
5
3
2
Per unit base =
Rth(j–c) = 0.21K/W
10^–3
10^–2
7
5
3
2
10^–3
10^–52 3 5 710^–42 3 5 710^–3
TIME (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 200A
16
VCC = 200V
VCC = 300V
12
8
4
0
0
400 800 1200 1600
200 600 1000 1400 1800
GATE CHARGE QG (nC)
Feb. 2009
4