|
CM200DU-12NFH Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE | |||
|
◁ |
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
5
3
2
102
7 trr
5
Irr
3
2
101101 2 3
5 7 102
Conditions:
VCC = 300V
VGE = ±15V
RG = 6.3â¦
Tj = 25°C
Inductive load
2 3 5 7 103
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10â32 3 5 710â22 3 5 710â12 3 5 7100 2 3 5 7 101
100
7
5
Single Pulse
3
TC = 25°C
2
10â1
7
5
3
2
10â1
7
5
3
2
10â2
7
5
10â2
7
5
3
2
Per unit base =
Rth(jâc) = 0.35°C/W
3
2
10â3
10â3
10â52 3 5 710â42 3 5 710â3
TIME (s)
MITSUBISHI IGBT MODULES
CM200DU-12NFH
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part )
10â32 3 5 710â22 3 5 710â12 3 5 7100 2 3 5 7 101
100
7
5
Single Pulse
3
TC = 25°C
2
10â1
7
5
3
2
10â1
7
5
3
2
10â2
7
5
10â2
7
5
3
2
Per unit base =
Rth(jâc) = 0.21°C/W
3
2
10â3
10â3
10â52 3 5 710â42 3 5 710â3
TIME (s)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 200A
16
VCC = 200V
VCC = 300V
12
8
4
0
0
400 800 1200 1600
200 600 1000 1400 1800
GATE CHARGE QG (nC)
Feb.2004
|