CM150DY-34A Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

HALF-BRIDGE
SWITCHING CHARACTERISTICS
SWITCHING TIME vs. COLLECTOR CURRENT
10³ _td(off)
7 tf
5
3 ^td(on)
2
10²
7
5 tr
3
2
10¹
10¹ 2 3
5 7 10²
Conditions:
VCC = 1000V
VGE = ±15V
RG = 3.2Ω
Tj = 125°C
Inductive load
2 3 5 7 10³
COLLECTOR CURRENT IC (A)
SWITCHING LOSS vs.
COLLECTOR CURRENT
10²
7
Eon
5
Eoff
Err
3
2
10¹
7
5
3
2
101⁰ ₀₁
23
5 7 10²
Conditions:
VCC = 1000V
VGE = ±15V
RG = 3.2Ω
Tj = 125°C
Inductive load
2 3 5 7 10³
COLLECTOR CURRENT IC (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
10³
7
5
3
2
10²
7
5
3
2
10¹₁₀₁
23
trr
Irr
5 7 10²
Conditions:
VCC = 1000V
VGE = ±15V
RG = 3.2Ω
Tj = 25°C
Inductive load
2 3 5 7 10³
EMITTER CURRENT IC (A)
4
MITSUBISHI IGBT MODULES
CM150DY-34A
HIGH POWER SWITCHING USE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
SWITCHING TIME vs. GATE RESISTANCE
10⁴
Conditions:
7 _{VCC = 1000V}
5 _{VGE = ±15V}
3 ^{IC = 150A}
Tj = 125°C
2 _{Inductive load}
td(off)
10³
td(on)
7
5
tr
tf
3
2
101² _{00 2 3 5 7 101 2 3 5 7 102}
GATE RESISTANCE RG (Ω)
SWITCHING LOSS vs.
GATE RESISTANCE
10³
Conditions:
7 _{VCC = 1000V}
5 _{VGE = ±15V}
3 ^{IC = 150A}
Tj = 125°C
2 _{Inductive load}
Eon
10²
7
5
Eoff
3
Err
2
101¹ _{00 2 3 5 7 101 2 3 5 7 102}
GATE RESISTANCE RG (Ω)
10⁰
7
5
3
2
10^–1
7
5
3
2
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
Single Pulse
Tc= 25°C
Tc measured point is
just under the chips
10^–2
7
5 IGBT part:
3 ^{Per unit base = Rth(j–c) = 0.078°C/W}
2 ^{FWDi part:}
Per unit base = Rth(j–c) = 0.15°C/ W
10^–3
10^–52 3 5710^–42 3 5710^–32 3 5710^–22 3 5710^–12 3 5710⁰ 2 3 5710¹
TIME (s)
Jun. 2007