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CM150DU-24NFH_11 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE
◁
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
103
7
5
3
2
td(off)
102
7
5
3
2
101
7
5
3
2
100101
23
5 7 102
td(on)
tf
tr
Conditions:
VCC = 600V
VGE = ±15V
RG = 2.1Ω
Tj = 125°C
Inductive load
2 3 5 7 103
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
100
7
5
Single Pulse
3
TC = 25°C
2
10–1
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3
2
Per unit base =
Rth(j–c) = 0.19K/W
10–3
10–2
7
5
3
2
10–3
10–52 3 5 710–42 3 5 710–3
TIME (s)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
IC = 150A
VCC = 400V
15
VCC = 600V
10
5
0
0 200 400 600 800 1000
GATE CHARGE QG (nC)
4
MITSUBISHI IGBT MODULES
CM150DU-24NFH
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
103
7 Tj = 25°C
7
5
5
3
3
2
Irr
2
102
7
5
3
2
101101
23
5 7 102
trr
102
7
Conditions: 5
VCC = 600V
VGE = ±15V 3
RG = 2.1Ω
Tj = 25°C
2
Inductive load 101
2 3 5 7 103
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
100
7
5
Single Pulse
3
TC = 25°C
2
10–1
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3
2
Per unit base =
Rth(j–c) = 0.35K/W
10–3
10–2
7
5
3
2
10–3
10–52 3 5 710–42 3 5 710–3
TIME (s)
Feb. 2009