CM1200HB-50H_05 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HB-50H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
5
3
2
td(off)
10⁰
7
5
3
2
10^–1
7
5 _{5 7 102}
td(on)
tr
tf
VCC = 1250V, VGE = ±15V
RG = 1.6Ω, Tj = 125°C
Inductive load
2 3 5 7 10³ 2 3 5
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
3.0
VCC = 1250V, VGE = ±15V,
RG = 1.6Ω, Tj = 125°C,
2.5 _{Inductive load}
2.0
Eon
1.5
Eoff
1.0
0.5
Erec
0
0 400 800 1200 1600 2000 2400
CURRENT (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
5
5
VCC = 1250V, Tj = 125°C
3 Inductive load
3
2 ^{VGE = ±15V, RG = 1.6Ω}
2
Irr
10¹
10³
7
7
5
5
3
3
2
2
10⁰
7
5 _{5 7 102}
23
trr
5 7 10³ 2 3
EMITTER CURRENT IE (A)
10²
7
55
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
3.0
2.5
2.0
1.5
1.0
0.5
0
0 5 10 15 20 25 30
GATE RESISTANCE (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 1250V
IC = 1200A
16
12
8
4
0
0
5000 10000 15000 20000
GATE CHARGE QG (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10¹
7 Single Pulse
5 _{TC = 25°C}
3 Rth(j – c)Q = 0.008K/ W
2 _{Rth(j – c)R = 0.016K/ W}
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2
10^–3 2 3 5 7 10^–2 2 3 5 7 10^–1 2 3 5 7 10⁰
TIME (s)
Mar. 2003