CM1200HA-66H_03 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-66H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
5
3
2
td(off)
10⁰
td(on)
7
5
tr
3
tf
2
10^–1
7
5
5
7 10²
VCC = 1650V, VGE = ±15V
RG = 2.5Ω, Tj = 125°C
Inductive load
2 3 5 7 10³ 2 3 5
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
2.4
VCC = 1650V, VGE = ±15V,
RG = 2.5Ω, Tj = 125°C,
2.0 _{Inductive load}
Eon
1.6
1.2
Eoff
0.8
Erec
0.4
0
0
400
800 1200 1600
CURRENT (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
5
5
VCC = 1650V, Tj = 125°C
3 Inductive load
3
2 ^{VGE = ±15V, RG = 2.5Ω}
2
10⁰
trr
10³
7
Irr
7
5
5
3
3
2
2
10^–1
7
5
5
7 10²
23
5 7 10³
23
10²
7
5
5
EMITTER CURRENT IE (A)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
4
Eon
3
2
Eoff
1
VCC = 1650V, IC = 1200A,
VGE = ±15V, Tj = 125°C,
Inductive load
0
0
5
10
15
20
GATE RESISTANCE (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 1650V
IC = 1200A
16
12
8
4
0
0 2000 4000 6000 8000 10000
GATE CHARGE QG (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10¹
7 Single Pulse
5 _{TC = 25°C}
3 Rth(j – c)Q = 0.012K/ W
2 _{Rth(j – c)R = 0.024K/ W}
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2
10^–3 2 3 5 7 10^–2 2 3 5 7 10^–1 2 3 5 7 10⁰
TIME (s)
Mar. 2003