CM1200HA-34H Datasheet, PDF (4/4 Pages) Powerex Power Semiconductors – HIGH POWER SWITCHING USE INSULATED TYPE

HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
MITSUBISHI HVIGBT MODULES
CM1200HA-34H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
5
VCC = 850V, VGE = ±15V
3 RG = 1.6Ω, Tj = 125°C
2 ^{Inductive load}
10⁰
td(off)
7
5
td(on)
3
tr
2
tf
10^–1
7
5 _{5 7 102 2 3 5 7 103 2 3 5}
COLLECTOR CURRENT IC (A)
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
1.2
VCC = 850V, VGE = ±15V,
RG = 1.6Ω, Tj = 125°C,
1.0 _{Inductive load}
0.8
Eon
Eoff
0.6
0.4
0.2
Erec
0
0 400 800 1200 1600 2000 2400
CURRENT (A)
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
5
5
VCC = 850V, Tj = 125°C
3 Inductive load
3
2 ^{VGE = ±15V, RG = 1.6Ω}
2
trr
10⁰
10³
7
Irr
7
5
5
3
3
2
2
10^–1
7
5 _{5 7 102}
23
5 7 10³
23
EMITTER CURRENT IE (A)
10²
7
55
HALF-BRIDGE
SWITCHING ENERGY CHARACTERISTICS
(TYPICAL)
3.0
Eon
2.5
2.0
1.5
1.0
0.5
0
0
Eoff
VCC = 850V, IC = 1200A,
VGE = ±15V, Tj = 125°C,
Inductive load
Erec
5 10 15 20 25 30
GATE RESISTANCE (Ω)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
VCC = 850V
IC = 1200A
16
12
8
4
0
0 2000 4000 6000 8000 10000
GATE CHARGE QG (nC)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
10¹
7 Single Pulse
5 _{TC = 25°C}
3 Rth(j – c)Q = 0.009K/ W
2 _{Rth(j – c)R = 0.028K/ W}
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2
10^–3 2 3 5 7 10^–2 2 3 5 7 10^–1 2 3 5 7 10⁰
TIME (s)
Mar. 2003