CM10MD-12H Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

PERFORMANCE CURVES
OUTPUT CHARACTERISTICS
(TYPICAL)
20
VGE=20 15
(V)
12
16 ^Tj=25°C
11
12
8
10
4
9
87
0
0 1 2 3 4 5 6 7 8 9 10
COLLECTOR-EMITTER VOLTAGE VCE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
5
VGE = 15V
Tj = 25°C
4
Tj = 125°C
3
2
1
0
0
4
8
12 16 20
COLLECTOR CURRENT IC (A)
FREE-WHEEL DIODE
FORWARD CHARACTERISITICS
(TYPICAL)
10²
7 ^{Tj = 25°C}
5
3
2
10¹
7
5
3
2
10⁰
0
0.8 1.6 2.4 3.2 4.0
EMITTER-COLLECTOR VOLTAGE VEC (V)
MITSUBISHI IGBT MODULES
CM10MD-12H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
TRANSFER CHARACTERISTICS
(TYPICAL)
20
VCE = 10V
16
12
8
4
Tj = 25°C
Tj = 125°C
0
0 2 4 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
10
Tj = 25°C
9
8
7
6
IC = 20A
5
4
IC = 10A
3
2
1
IC = 4A
0
0 2 4 6 8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE VGE (V)
CAPACITANCE VS. VCE
(TYPICAL)
10¹
7 ^{VGE = 0V}
5
3
2
10⁰
7
Cies
5
Coes
3
2
10^–1
7
5
3
2
Cres
10^–2
10^–1 2 3 5 7 10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
COLLECTOR-EMITTER VOLTAGE VCE (V)
Feb.1999