CM100RX-24A Datasheet, PDF (4/8 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

MITSUBISHI IGBT MODULES
CM100RX-24A
HIGH POWER SWITCHING USE
NTC THERMISTOR PART
Symbol
R
ΔR/R
B(25/50)
P25
Parameter
Zero power resistance
Deviation of resistance
B constant
Power dissipation
Conditions
TC = 25°C
TC = 100°C, R100 = 493Ω
Approximate by equation
TC = 25°C
Limits
Min.
Typ.
Max. ^Unit
4.85
5.00
5.15
kΩ
–7.3
—
+7.8
%
(Note. 7) —
3375
—
K
—
—
10
mW
MODULE
Symbol
Rth(c-f)
Parameter
Conditions
Contact thermal resistance Thermal grease applied
(Case to fin)
(Note. 1) per 1 module
Min.
(Note. 2) ^—
Limits
Typ.
0.015
Max.
—
Note.1: Case temperature (TC), heat sink temperature (Tf) measured point is just under the chips. (Refer to the figure of the chip location.)
2: Typical value is measured by using thermally conductive grease of λ = 0.9W/(m·K).
3: IE, IERM, VEC, trr and Qrr represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (FWDi).
IF, IFRM, VF, VRRM and IRRM represent ratings and characteristics of the Clamp diode of Brake part.
4: Pulse width and repetition rate should be such that the device junction temperature (Tj) dose not exceed Tjmax rating.
5: Junction temperature (Tj) should not increase beyond 150°C.
6: Pulse width and repetition rate should be such as to cause negligible temperature rise.
(Refer to the figure of the test circuit for VCE(sat) and VEC)
7:
B(25/50)
=
In(
R25
R50
)/(
1
T25
1)
T50
R25: resistance at absolute temperature T25 [K]; T25 = 25 [°C]+273.15 = 298.15 [K]
R50: resistance at absolute temperature T50 [K]; T50 = 50 [°C]+273.15 = 323.15 [K]
Unit
K/W
Chip Location (Top view)
LABEL SIDE
Dimensions in mm (tolerance: ±1mm)
0
16.9
23.9
27.6
34.6
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
Tr
Tr
35 UP _{T r} VP _{T r}
D i UN D i VN
UP _{D i} VP _{D i}
UN
VN
36
1
2
Tr
WP
Di
Tr ^Br
12
11
D i WN _Th
10
WP _{D i}
9
8
WN _{T r} ⁷
Br
6
5
3
4
0
18.4
26.8
40.8
(110)
(121.7)
(136.9)
Each mark points the center position of each chip. Tr**: IGBT, Di**: FWDi (DiBr: Clamp diode), Th: NTC thermistor
Jan. 2009
4