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| CM100E3U-12H Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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MITSUBISHI IGBT MODULES
CM100E3U-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
103
VCC = 300V
VGE = ±15V
RG = 6.3â¦
Tj = 125°C
td(off)
tf
102
td(on)
101
tr
100
101
102
COLLECTOR CURRENT, IC, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
( IGBT)
10110-3
10-2
10-1
100
101
Single Pulse
TC = 25°C
100 Per Unit Base = Rth(j-c) = 0.31°C/W
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
di/dt = -200A/µsec
Tj = 25°C
102
trr
101
Irr
101
101
102
EMITTER CURRENT, IE, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10110-3
10-2
10-1
100
Single Pulse
TC = 25°C
100 Per Unit Base = Rth(j-c) = 0.7°C/W
100
103
101
GATE CHARGE, VGE
20
IC = 100A
16
VCC = 200V
VCC = 300V
12
8
4
0
0 50 100 150 200 250 300
GATE CHARGE, QG, (nC)
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3
10-5
TIME, (s)
10-4
10-3
10-3
10-3
10-5
TIME, (s)
10-4
10-3
10-3
Sep.1998
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