|
CM100DY-24NF_09 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE | |||
|
◁ |
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
5
3
2
102
7
5
3
2
101
101
23
Irr
trr
5 7 102
Conditions:
VCC = 600V
VGE = ±15V
RG = 3.1â¦
Tj = 25°C
Inductive load
2 3 5 7 103
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 100A
16
VCC = 400V
VCC = 600V
12
8
4
0
0 200 400 600 800 1000
GATE CHARGE QG (nC)
MITSUBISHI IGBT MODULES
CM100DY-24NF
HIGH POWER SWITCHING USE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10â32 3 5 710â22 3 5 710â12 3 5 7100 2 3 5 7 101
100
7
5
Single Pulse
3
TC = 25°C
2
10â1
7
5
3
2
IGBT part:
10â2 Per unit base =
7
5
Rth(jâc) = 0.19K/W
FWDi part:
3
2
Per unit base =
Rth(jâc) = 0.35K/W
10â3
10â1
7
5
3
2
10â2
7
5
3
2
10â3
10â52 3 5 710â42 3 5 710â3
TIME (s)
Feb. 2009
4
|