|
CM100DU-34KA_09 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE | |||
|
◁ |
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
5
3 tf
2
103 td(off)
7
5 td(on)
3
2
102
7
5 tr
3
2
101
101 2 3
5 7 102
Conditions:
VCC = 1000V
VGE = ±15V
RG = 3.1â¦
Tj = 125°C
Inductive load
2 3 5 7 103
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10110â32 3 5 710â22 3 5 710â12 3 5 7100 2 3 5 7 101
7
5
IGBT part:
Per unit base = Rth(jâc) = 0.14K/ W
3 FWDi part:
2 Per unit base = Rth(jâc) = 0.24K/ W
100
7
5
3
3
2
2
10â1
7
5
10â1
7
5
3
3
2
2
10â2
7
5
3
2
10â3
Single Pulse
TC = 25°C
10â2
7
5
3
2
10â3
10â52 3 5 710â42 3 5 710â3
TIME (s)
MITSUBISHI IGBT MODULES
CM100DU-34KA
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7
5
3
2
102
7
5
3
2
101
101
23
trr
Irr
5 7 102
Conditions:
VCC = 1000V
VGE = ±15V
RG = 3.1â¦
Tj = 25°C
Inductive load
2 3 5 7 103
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 100A
16
VCC = 800V
12
VCC = 1000V
8
4
0
0 100 200 300 400 500 600
GATE CHARGE QG (nC)
Feb. 2009
4
|