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CM100DU-24H_11 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
◁
HALF-BRIDGE
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
103
7
tf
Tj = 125°C
5
3
2
td(off)
102
7
td(on)
5
3
2
tr
101
7
5
3
2
100
7
101
23
VCC = 600V
VGE = ±15V
RG = 3.1Ω
5 7 102 2 3 5 7
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
101
7
5
Single Pulse
3 TC = 25°C
2 Per unit base = Rth(j – c) = 0.19K/W
100
7
5
3
3
2
2
10–1
7
5
10–1
7
5
3
3
2
2
10–2
7
5
10–2
7
5
3
2
10–3
3
2
10–3
10–52 3 5 710–42 3 5 710–3
TIME (s)
MITSUBISHI IGBT MODULES
CM100DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
102
7 – di /dt = 200A /µs
7
5 Tj = 25°C
5
3
3
2
2
trr
102
101
7
Irr
7
5
5
3
3
2
2
101
3
5 7 101
23
5 7 102
100
23
EMITTER CURRENT IE (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi part)
10–32 3 5 710–22 3 5 710–12 3 5 7100 2 3 5 7 101
101
7
5
Single Pulse
3 TC = 25°C
2 Per unit base = Rth(j – c) = 0.35K/W
100
7
5
3
3
2
2
10–1
7
5
10–1
7
5
3
3
2
2
10–2
7
5
10–2
7
5
3
2
10–3
3
2
10–3
10–52 3 5 710–42 3 5 710–3
TIME (s)
GATE CHARGE CHARACTERISTICS
(TYPICAL)
20
IC = 100A
15
VCC = 400V
VCC = 600V
10
5
0
0 100 200 300 400 500
GATE CHARGE QG (nC)
4
Feb. 2009