CM1000DU-34NF_09 Datasheet, PDF (4/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE

HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10⁴
7
5
3
2
10³
td(off)
7
5
td(on)
3
2
10²
7
5
3
2
10¹
10²
tf
tr
2 3 5 7 10³
Conditions:
VCC = 1000V
VGE = ±15V
RG = 0.47Ω
Tj = 125°C
Inductive load
2 3 5 7 10⁴
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10^–32 3 5 710^–22 3 5 710^–12 3 5 710⁰ 2 3 5 7 10¹
10¹
7
Single Pulse
5 IGBT part:
3 ^{Per unit base = Rth(j–c) = 0.014K/ W}
2 ^{FWDi part:}
10^{0 Per unit base = Rth(j–c) = 0.023K/ W}
7
5
3
2
10^–1
7
5
3
2
10^–1
7
5
3
3
2
2
10^–2
7
5
3
2
10^–3
TC measured
point is just
under the chips
10^–2
7
5
3
2
10^–3
10^–52 3 5 710^–42 3 5 710^–3
TIME (s)
10³
7
5
3
2
10²
7
5
3
2
10¹
7
5
3
2
10⁰₁₀₂
IC-ESW
(TYPICAL)
Err
Eoff
Eon
23
5 7 10³
Conditions:
VCC = 1000V
VGE = ±15V
RG = 0.47Ω
Tj = 125°C
Inductive load
2 3 5 7 10⁴
IC (A)
4
MITSUBISHI IGBT MODULES
CM1000DU-34NF
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
10⁴
7
5
3
2
10³
7
5
3
2
10²
10²
23
Irr
trr
5 7 10³
Conditions:
VCC = 1000V
VGE = ±15V
RG = 0.47Ω
Tj = 25°C
Inductive load
2 3 5 7 10⁴
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 1000A
VCC = 800V
16
12
VCC = 1000V
8
4
0
0 2000 4000 6000 8000 10000
GATE CHARGE QG (nC)
10³
7
5
3
2
10²
7
5
3
2
10¹
0
RG-ESW
(TYPICAL)
Eon
Eoff
Err
Conditions:
VCC = 1000V
VGE = ±15V
IC = 1000A
Tj = 125°C
Inductive load
1
2
3
4
5
RG (Ω)
Feb. 2009