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BCR5KM Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5KM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140
OF CONDUCTION ANGLE
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 INDUCTIVE
LOADS
0
012345678
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
140
NO FINS
CURVES APPLY REGARDLESS
120
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
102
7
5
4
3
2
101
7
5
4
3
2
,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,DI,,,,,,,,,,STR,,,,,,,,,,IB,,,,,,,,,,UTETY,,,,,,,,,,XIOPANIM,,,,,,,,,,CPAL,,,,,,,,,,LE
VD = 12V
100
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
140
ALUMINUM AND GREASED
120
120 120 t2.3
100
100 100 t2.3
60 60 t2.3
80
60
CURVES APPLY
40
REGARDLESS OF
CONDUCTION ANGLE
20
RESISTIVE,
INDUCTIVE LOADS
NATURAL CONVECTION
0
012345678
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
105
7
TYPICAL EXAMPLE
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
103
7
5
3
DISTRIBUTION T2+, G–
2
102
7
5
3
2
101
7
5
3
2
T,,,,,,,,2+, G,,,,,,,,+ ,,,,,,,,TY,,,,,,,,PIC,,,,,,,,AL,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,TEYXP,,,,,,,,AIMC,,,,,,,,PALLE
T2– , G– EXAMPLE
100
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
Feb.1999