BCR5AS Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE ALUMINUM
140
120
170 170 t2.3
140 140 t2.3
100
80 80 t2.3
80
60
NATURAL
40 CONVECTION
CURVES APPLY
20 _{REGARDLESS OF}
RESISTIVE
INDUCTIVE,
CONDUCTION ANGLE LOADS
0
012345678
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10⁵
7 TYPICAL EXAMPLE
5
3
2
10⁴
7
5
3
2
10³
7
5
3
2
10²
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
5
T2⁺,
T2^– ,
G⁺
G^–

TYPICAL
EXAMPLE
3
2
10²
7
5
3
2
10¹
7
5
3
2
,,,,,,,,^DIS,,,,,,,,^TR,,,,,,,,^IBU,,,,,,,,^TIO,,,,,,,,^N,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,^TTE2YX+,PA,,,,,,,,^GIMC–,,,,,,,,^PALLE
10⁰
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
140
NO FINS
CURVES APPLY REGARDLESS
120
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10²
7
5
4
3
2
10¹
7
5
4
3
2
VD = 12V
,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,^D,,,,,,,,,,^IS,,,,,,,,,,^TRI,,,,,,,,,,^BU,,,,,,,,,,^TETYXIOP,,,,,,,,,,^ANIMC,,,,,,,,,,^PALLE
10⁰
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
160
TYPICAL EXAMPLE
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100120 140
JUNCTION TEMPERATURE (°C)
Feb.1999