BCR12PM-14 Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE

ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
160
CURVES APPLY REGARDLESS
140
OF CONDUCTION ANGLE
120
100
80
60
360°
40 CONDUCTION
RESISTIVE,
20 _INDUCTIVE
LOADS
0
0 2 4 6 8 10 12 14 16
RMS ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
NATURAL CONVECTION
140
NO FINS
CURVES APPLY REGARDLESS
120
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
100
80
60
40
20
0
0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2
RMS ON-STATE CURRENT (A)
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
TYPICAL EXAMPLE
5
4
3
2
10²
7
5
4
3
2
10¹
–60 –40 –20 0 20 40 60 80 100 120140
JUNCTION TEMPERATURE (°C)
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12PM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
160
ALL FINS ARE BLACK PAINTED
140
ALUMINUM AND GREASED
CURVES APPLY REGARDLESS
120
OF CONDUCTION ANGLE
120 120 t2.3
100
100 100 t2.3
80
60 60 t2.3
60 ^{NO FINS}
RESISTIVE,
40 INDUCTIVE
LOADS
20 _NATURAL
CONVECTION
0
0 2 4 6 8 10 12 14 16
RMS ON-STATE CURRENT (A)
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
10⁵
7 TYPICAL EXAMPLE
5
3
2
10⁴
7
5
3
2
10³
7
5
3
2
10²
–60 –40 –20 0 20 40 60 80 100 120 140
JUNCTION TEMPERATURE (°C)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
10³
7
5
DISTRIBUTION
T2⁺, G^–
11003275327532²¹_{,,,,,,,,TT,,,,,,,,22+–,,G,,,,,,,,G+–,,,,,,,,TEYX,,,,,,,,PAIMC,,,,,,,,PALL,,,,,,,,E ,,,,,,,,,,,,,,,,}^TE_,,,,,,,,^YXPA_,,,,,,,,^IMCPALLE
10⁰
–40 0
40 80 120 160
JUNCTION TEMPERATURE (°C)
Feb.1999