English
Language : 

MH16S72DAMD-6 Datasheet, PDF (32/55 Pages) Mitsubishi Electric Semiconductor – 1207959552-BIT (16777216 - WORD BY 72-BIT)Synchronous DRAM
Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH16S72DAMD -6,-7,-8
1207959552-BIT (16777216 - WORD BY 72-BIT)Synchronous DRAM
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Parameter Symbol
Test Condition
operating current
one bank activ e (discrete)
precharge stanby
current
in power-down mode
precharge stanby current
in non power-down mode
active stanby current
in non power-down mode
one bank activ e (discrete)
burst current
auto-refresh current
Icc1 tRC=min.tCLK=min, BL=1,CL=3
Icc2P CKE=L,tCLK=15ns, /CS>Vcc-0.2V
Icc2PS CKE=CLK=L, /CS>Vcc-0.2V
Icc2N CKE=H,tCLK=15ns,VIH>Vcc-0.2V,VIL<0.2V
Icc2NS CKE=H,CLK=L,VIH>Vcc-0.2V,VIL<0.2V(f ixed)
Icc3N CKE=H,tCLK=15ns
Icc3NS CKE=H,CLK=L
Icc4 tCLK=min, BL=4, CL=3,all banks activ e(discerte)
Icc5 tRC=min, tCLK=min
self-refresh current
Icc6 CKE <0.2V
Limits
(max)
-6 -7, -8
945 900
36
18
360
270
540
450
1080
2340
18
36
18
360
270
540
450
900
1980
18
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Note)
1:Icc(max) is specif ied at the output open condition.
2.Input signals are changed one time during 30ns.
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Symbol
Parameter
Test Condition
Limits
Min. Max. Unit
VOH(DC) High-Level Output Voltage(DC) IOH=-2mA
2.4
V
VOL(DC) Low-Level Output Voltage(DC) IOL=2mA
0.4 V
VOIHO(ZAC) OHfifg-sht-aLrevOeluOtpuuttpCutuVrroelntat ge(AC) QCLfl=o5a0tipnFg, VIOOH==0- ~ Vdd 2-5 5 uVA
VOLI(iAC) LInopwu-tLCevuerrleOntutput Voltage(AC) 2CVmLIH=A=500p~FV, dIOdL+=02.3mVA -90 900.8 uVA
MIT-DS-0336-0.0
MITSUBISHI
ELECTRIC
( 32 / 55 )
23.Sep.1999