MH16S72BAMD-7 Datasheet, PDF (30/55 Pages) Mitsubishi Electric Semiconductor – 1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM

Preliminary Spec.
Some contents are subject to change without notice.
MITSUBISHI LSIs
MH16S72BAMD -7,-8,-10
1207959552-BIT (16777216 - WORD BY 72-BIT)SynchronousDRAM
AVERAGE SUPPLY CURRENT from Vdd
(Ta=0 ~70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Parameter Symbol
Test Condition
Limits
(max)
Unit
-7, -8 -10
operating current
one bank active (discrete)
Icc1 tRC=min.tCLK=min, BL=1, IOL=min
1188
963 ^mA
precharge stanby current Icc2P CKE=VILmax,tCLK=15ns
in power-down mode
Icc2PS ^{CKE=CLK=VILmax(fixed)}
36
36 _mA
18
18 mA
precharge stanby current _Icc2N CKE=/CS=VIHmin,tCLK=15ns(Note)
in non power-down mode _{Icc2NS CKE=VIHmin,CLK=VILmax(fixed)}
396 396 mA
360 360 ^mA
active stanby current
in power-down mode
Icc3P CKE=VILmax,tCLK=15ns
Icc3PS ^{CKE=CLK=VILmax(fixed)}
36
36 ^mA
18
18 mA
active stanby current
in non power-down mode
one bank active (discrete)
Icc3N ^{CKE=/CS=VIHmin,tCLK=15ns}
Icc3NS ^{CKE=VIHmin,CLK=VILmax(fixed)}
990 810 mA
720 720 mA
burst current
Icc4 ^{tCLK=min, BL=4, CL=3,IOL=0mAall banks active(discerte) 1233 1233 mA}
auto-refresh current
Icc5 ^{tRC=min, tCLK=min}
2700 2070 mA
self-refresh current
Icc6 _{CKE <0.2V}
18
18 ^mA
Note:Input signals are changed one time during 30ns.
Note:All other pins not under test are 0V.
AC OPERATING CONDITIONS AND CHARACTERISTICS
(Ta=0 ~ 70°C, Vdd = 3.3 ± 0.3V, Vss = 0V, unless otherwise noted)
Symbol
Parameter
Test Condition
VOH(DC) High-Level Output Voltage(DC)
VOL(DC) Low-Level Output Voltage(DC)
VOIHO(ZAC HOifgf-hs-tLaereveOl uOtpuutptuCt uVroreltnatge(AC)
)VOLI(iAC) _{LInopwu-tLCeuverrleOntutput Voltage(AC)}
IOH=-2mA
IOL=2mA
CQLf=lo5a0tipnFg, VO=0 ~ Vdd
ICVOILHH===50-02p~mFVA, _{dIOd+L=0.23mVA}
Limits
Min. Max. ^Unit
2.4
V
0.4 V
-120 10 uAV
-90 900.8 uAV
MIT-DS-0221-0.4
MITSUBISHI
ELECTRIC
( 30 / 55 )
29.Oct.1998