RM400DY-66S Datasheet, PDF (3/3 Pages) Powerex Power Semiconductors – HIGH POWER, HIGH SPEED SWITCHING USE INSULATED TYPE

HVDi (High Voltage Diode) Module
PERFORMANCE CURVES
MAXIMUM FORWARD CHARACTERISTIC
3
2 Tj = 25°C
10³
7
5
3
2
10²
7
5
30
1
2
3
4
5
FORWARD VOLTAGE (V)
REVERSE RECOVERY CHARACTERISTICS
VS. FORWARD CURRENT (TYPICAL)
300
VCC = 1650V, diF/dt = –800A/µs
Tj = 25°C
Inductive load
Integrated over range of 10%
200
100
0
0 200 400 600 800 1000
FORWARD CURRENT (A)
MITSUBISHI FAST RECOVERY DIODE MODULE
RM400DY-66S
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM TRANSIENT THERMAL IMPEDANCE
(JUNCTION TO CASE)
10¹
7 Single Pulse
5 _{TC = 25°C}
3 Rth(j – c) = 0.072K/ W
2
10⁰
7
5
3
2
10^–1
7
5
3
2
10^–2
10^–3 2 3 5 7 10^–2 2 3 5 7 10^–1 2 3 5 7 10⁰
TIME (s)
REVERSE RECOVERY CHARACTERISTICS
VS. –di/dt (TYPICAL)
500
VCC = 1650V
IF = 400A
400
300
200
100
00
500 1000 1500 2000 2500
–di/dt (A/µs)
Mar. 2003