RD45HMF1 Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – Silicon MOSFET Power Transistor 900MHz,45W

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD45HMF1
Silicon MOSFET Power Transistor 900MHz,45W
TYPICAL CHARACTERISTICS
Pin-Po CHARACTERISTICS
50
Ta=+25°C
f=900MHz
Po
Vdd=12.5V
Idq=2A
40
100
80
30
60
20
Gp
10
ηｄ
40
Ｉｄｄ
20
0
0
25
30
35
40
45
Pin(dBm)
Pin-Po CHARACTERISTICS
70
Ta=25°C
60 f=900MHz
Vdd=12.5V
50 ^Idq=2A
Po
40
ηd
30
20
Idd
10
0
0
5
10
15
20
Pin(W)
140
120
100
80
60
40
20
0
25
Vdd-Po CHARACTERISTICS
100
25
Ta=25°C
80
f=900MHz
Pin=15W
Idq=2A
Zg=ZI=50 ohm
60
Po
20
15
40
Idd
10
20
5
0
0
4
6
8
10
12
14
Vdd(V)
Vgs-Ids CHARACTERISTICS 2
10
Vds=10V
8 ^{Tc=-25~+75°C}
6
4
2 +75°C
-25°C
0
1.5
2.5
3.5
Vgs(V)
+25°C
RD45HMF1
MITSUBISHI ELECTRIC
3/7
REV.2 7 Apr. 2003