RA60H1317M_11 Datasheet, PDF (3/9 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO

<Silicon RF Power Modules >
RA60H1317M
RoHS Compliance , 135-175MHz 60W 12.5V, 3 Stage Amp. For MOBILE RADIO
TYPICAL PERFORMANCE (T_case=+25°C, Z_G=Z_L=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
90
90
80
80
70
P_out
70
60
60
50
η_T
50
40
40
30
V_DD=12.5V
30
20
V_GG=5V
P_in=50mW
20
10
ρ_in
10
0
0
135
145
155
165
175
FREQUENCY f(MHz)
2^nd, 3^rd HARMONICS versus FREQUENCY
-20
V_DD=12.5V
-30
V_GG=5V
2^nd
P_in=50mW
-40
-50
3^rd
-60
-70
135
145
155
165
175
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
14
60
50
Gp
12
P_{out 10}
40
8
30
6
20
10
0
-10
I_DD
f=135MHz, ⁴
V_DD=12.5V, ₂
V_GG=5V
0
-5 0 5 10 15 20
INPUT POWER P_in(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
14
60
12
50
Gp
40
10
P_out
8
30
20
10
0
-10
I_DD
6
4
f=175MHz,
V_DD=12.5V, 2
V_GG=5V
0
-5 0 5 10 15 20
INPUT POWER P_in(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
14
60
50
Gp
40
12
10
P_out
8
30
20
10
0
-10
I_DD
6
4
f=155MHz,
V_DD=12.5V, 2
V_GG=5V
0
-5 0 5 10 15 20
INPUT POWER P_in(dBm)
Publication Date : Oct.2011
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