RA60H1317M1A Datasheet, PDF (3/9 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA60H1317M1A
TYPICAL PERFORMANCE (T_case=+25°C, Z_G=Z_L=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
100
100
90
90
80
P_out
80
70
70
60
60
50
ηT
50
40
30
20
10
ρ _in
40
V_DD=12.5V
V_GG=5V
30
P_in=50m W
20
10
0
130
140 150 160 170
FREQUENCY f(MHz)
0
180
2^nd, 3^rd HARMONICS versus FREQUENCY
-20
-25
V _DD=12.5V
V _GG=5V
-30
P_in=50m W
-35
-40
-45
-50
-55
2^nd
-60
3^rd
-65
-70
130
140
150
160
170
180
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
14
60
50
Gp
40
12
P_out
10
8
30
20
10
0
-10
I_DD
f =136M Hz
V _DD=12.5V
V _GG=5V
-5
0
5
10 15
INPUT POWER P_in(dBm)
6
4
2
0
20
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
14
60
50
Gp
40
12
P_out
10
8
30
20
10
0
-10
I_DD
f=174M Hz
V_DD=12.5V
V_GG=5V
-5
0
5
10 15
INPUT POWER P_in(dBm)
6
4
2
0
20
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
14
60
50
Gp
40
12
P_out
10
8
30
20
10
0
-10
I_DD
f=155M Hz
V_DD=12.5V
V_GG=5V
-5
0
5
10 15
INPUT POWER P_in(dBm)
6
4
2
0
20
RA60H1317M1A
MITSUBISHI ELECTRIC
3/9
2 Aug 2007