RA55H4452M-101 Datasheet, PDF (3/9 Pages) Mitsubishi Electric Semiconductor – Broadband Frequency Range

<Silicon RF Power Modules >
RA55H4452M
RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO
TYPICAL
PERFORMANCE (T_case=+25°C, Z_G=Z_L=50Ω,
OUTPUT POWER, TOTAL EFFICIENCY,
unless
otherwise specified)
2^nd, 3^rd HARMONICS versus
FREQUENCY
and INPUT VSWR versus FREQUENCY
80
80
-30
P_out
70
70
-40
60
60
ηT
50
50
-50
V _DD=12.5V
V _GG=5V
P_in=50m W
40
40
30
30
V _DD=12.5V
20
V _GG=5V
20
P_in=50m W
10
ρ _in
10
0
0
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f(MHz)
-60
2^nd
-70
3^rd
-80
430 440 450 460 470 480 490 500 510 520 530
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
50
Gp
40
P_out
20
16
30
12
20
I_DD
8
f=440M Hz ,
10
V_DD=12.5V,
4
V_GG=5V
0
0
-10
-5
0
5
10
15
20
INPUT POWER P_in(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
50
Gp
P_out
20
40
16
30
12
20
10
0
-10
I_DD
f=490M Hz ,
V _DD=12.5V ,
V_GG=5V
-5
0
5
10
15
INPUT POWER P_in(dBm)
8
4
0
20
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
120
110
f=440M Hz ,
100
V_GG=5V,
P_out
90
P_in=50m W
80
70
60
I_DD
50
40
30
20
10
0
2
4
6
8 10 12 14
DRAIN VOLTAGE V_DD(V)
Publication Date : Oct.2011
24
22
20
18
16
14
12
10
8
6
4
2
0
16
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
50
Gp
P_out
20
40
16
30
12
20
I_DD
8
f=470M Hz ,
10
V_DD=12.5V,
4
V_GG=5V
0
0
-10
-5
0
5
10
15
20
INPUT POWER P_in(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
50
Gp
P_out
20
40
16
30
12
20
10
0
-10
I_DD
f=520M Hz,
V_DD=12.5V,
V_GG=5V
-5
0
5
10
15
INPUT POWER P_in(dBm)
8
4
0
20
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
120
110
f=470M Hz,
100
V_GG=5V,
90
P_in=50m W
P_out
80
70
60
50
I_DD
40
30
20
10
0
2
4
6
8 10 12 14
DRAIN VOLTAGE V_DD(V)
24
22
20
18
16
14
12
10
8
6
4
2
0
16
3