RA55H3340M Datasheet, PDF (3/9 Pages) Mitsubishi Electric Semiconductor – 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RA55H3340M
TYPICAL PERFORMANCE (T_case=+25°C, Z_G=Z_L=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
80
80
70
P_out
70
60
60
50
50
η_T
40
40
30
20
10
ρ_in
V_DD=12.5V
30
V_GG=5V
20
P_in=50mW
10
0
0
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
2^nd, 3^rd HARMONICS versus FREQUENCY
-30
V_DD=12.5V
-40
V_GG=5V
P_in=50mW
-50
3^rd
-60
2^nd
-70
-80
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
50
Gp
P_out
20
40
16
30
20
10
0
-10
12
I_DD
8
f=330MHz,
V_DD=12.5V, 4
V_GG=5V
0
-5 0 5 10 15 20
INPUT POWER P_in(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
50
Gp
P_out
20
40
16
30
20
10
0
-10
12
I_DD
8
f=400MHz,
V_DD=12.5V,
4
V_GG=5V
0
-5 0 5 10 15 20
INPUT POWER P_in(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
60
24
Gp
50
P_out
20
40
16
30
12
20
I_DD
10
f=365MHz,
8
V_DD=12.5V,
V_GG=5V
4
0
0
-10 -5 0 5 10 15 20
INPUT POWER P_in(dBm)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
120
110 f=330MHz,
100
90
80
V_GG=5V,
P_in=50mW
70
60
50
40
30
20
10
0
24
22
20
P_out
18
16
14
12
I_DD
10
8
6
4
2
0
2 4 6 8 10 12 14 16
DRAIN VOLTAGE V_DD(V)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
120
110 f=365MHz,
100
90
80
V_GG=5V,
P_in=50mW
70
60
50
40
30
20
10
0
24
22
20
18
P_out
16
14
12
I_DD ¹⁰
8
6
4
2
0
2 4 6 8 10 12 14 16
DRAIN VOLTAGE V_DD(V)
RA55H3340M
MITSUBISHI ELECTRIC
3/9
18 July 2007