RA08N1317M_06 Datasheet, PDF (3/8 Pages) Mitsubishi Electric Semiconductor – RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA08N1317M
TYPICAL PERFORMANCE (T_case=+25°C, Z_G=Z_L=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
14
140
12
P_out @VGG=3.5V
120
10
100
8
η_T @P_out=8W
80
6
60
V_DD=9.6V
4
P_in=20mW
40
2
ρ_in @P_out=8W
20
2^nd, 3^rd HARMONICS versus FREQUENCY
-20
-30
-40
2^nd @Pout=8W
V_DD=9.6V
P_in=20mW
-50
-60
3^rd @Pout=8W
0
130
140 150 160 170
FREQUENCY f(MHz)
0
180
-70
130 140 150 160 170 180
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
5
40
Gp
P_out
4
30
3
20
2
10
I_DD
f=135MHz,
V_DD=9.6V,
1
V_GG=3.5V
0
0
-15 -10 -5 0 5 10 15 20
INPUT POWER P_in(dBm)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
5
Gp
40
P_out
4
30
3
20
2
10
0
-15
I_DD
f=175MHz, ₁
V_DD=9.6V,
V_GG=3.5V
0
-10 -5 0 5 10 15 20
INPUT POWER P_in(dBm)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
25
5
f=135MHz,
20 ^VGG=3.5V,
P_in=20mW
4
P_out
15
3
10
I_DD
2
5
1
0
0
2
4
6
8
10 12
DRAIN VOLTAGE V_DD(V)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
5
Gp
40
P_out
4
30
3
20
2
10
0
-15
I_DD
f=160MHz, ₁
V_DD=9.6V,
V_GG=3.5V
0
-10 -5 0 5 10 15 20
INPUT POWER P_in(dBm)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
25
5
f=160MHz,
20
V_GG=3.5V,
P_in=20mW
15
4
P_out
3
10
2
I_DD
5
1
0
0
2
4
6
8
10 12
DRAIN VOLTAGE V_DD(V)
RA08N1317M
MITSUBISHI ELECTRIC
3/8
24 Jan 2006