RA05H9595M Datasheet, PDF (3/7 Pages) Mitsubishi Electric Semiconductor – RF MOSFET MODULE 952-954MHz 5W 14V, 3 Stage Amp.

ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MODULE
RoHS COMPLIANCE RA05H9595M
TYPICAL PERFORMANCE (T_case=+25°C, Z_G=Z_L=50Ω, unless otherwise specified)
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
30.0
70
V_DD=14V
25.0
Vgg=5V
P_in=1m W
P_out
20.0
50
ηT
15.0
10.0
30
5.0
ρ _in
0.0
10
920 930 940 950 960 970 980
FREQUENCY f(MHz)
2^nd, 3^rd HARMONICS versus FREQUENCY
-20
V _DD=14V
Vgg=5V
-30
P_in=1m W
-40
2^nd
-50
3^rd
-60
-70
920 930 940 950 960 970 980
FREQUENCY f(MHz)
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
70
7
60
6
50
Gp
5
40
P_out
4
30
20
I_DD
10
3
f=953M Hz ,
2
V _DD=14V ,
V_GG=5V
1
0
0
-10
-5
0
5
10
INPUT POWER P_in(dBm)
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
30
6
f=953M Hz ,
25
V _GG=5V ,
5
P_in=1m W
20
4
15
3
I_DD
10
P_out
2
5
1
0
0
2
4
6
8
10
12
14
DRAIN VOLTAGE V_DD(V)
OUTPUT POWER and DRAIN CURRENT
versus GATE VOLTAGE
30
6
f=953M Hz ,
25
V _DD=14V ,
P_in=1m W
20
5
P_out
4
15
I_DD
3
10
2
5
1
0
0
3
3.5
4
4.5
5
5.5
GATE VOLTAGE V_GG(V)
RA05H9595M
MITSUBISHI ELECTRIC
3/7
12 Mar 2007