QM50TB-2HB Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
100
Tj=25°C
80
60
40
IB_I=B=4IB^{02=006m07mAmAA}
IB^=20mA
20
IB=10mA
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10 ⁰
7 VCE=4V
5 ^Tj=25°C
4
3
2
10 ^–1
7
5
4
3
2
10 ^–2
2.8 3.2 3.6 4.0 4.4 4.8
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
4
3
2
IC=50A
IC=30A
1
Tj=25°C
0
Tj=125°C
10 ^–3 2 3 4 5 710 ^–2 2 3 4 5 710 ^–1 2 3 4 5 7 10 ⁰
BASE CURRENT IB (A)
MITSUBISHI TRANSISTOR MODULES
QM50TB-2HB
MEDIUM POWER SWITCHING USE
INSULATED TYPE
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
10 ⁴
7
Tj=25°C
5
Tj=125°C
4
3
VCE=10V
2
10 ³
VCE=4V
7
5
4
3
2
10 ²
10 ⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10¹
7
5
4
VBE(sat)
3
2
10 ⁰
7
5
4
3
2
10^–1
10 ⁰
VCE(sat)
IB=67mA
Tj=25°C
Tj=125°C
2 3 4 5 7 10¹ 2 3 4 5 7 10²
COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
3
2
10 ¹
ts
7
5
4
VCC=600V
IB1=100mA
3 _–IB2=1A
2
Tj=25°C
Tj=125°C
10 ⁰
tf
7
5
ton
4
3
3 4 5 7 10 ¹
2 3 4 5 7 10²
23
COLLECTOR CURRENT IC (A)
Feb.1999