QM30DY-H Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
100
Tj=25°C
80
IB=2.0A
60
IB=1.0A
IB=0.5A
40
IB=0.3A
20
IB=0.1A
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10 ¹
7
5
4
Tj=25°C
VCE=2.0V
3
2
10 ⁰
7
5
4
3
2
10 ^–1
1.0 1.4 1.8 2.2 2.6 3.0
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
Tj=25°C
Tj=125°C
4
3
2
IC=30A
1
IC=10A ^IC=20A
0
10^–2 2 3 4 5 7 10^–1 2 3 4 5 7 10 ⁰
BASE CURRENT IB (A)
MITSUBISHI TRANSISTOR MODULES
QM30DY-H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
10 ³
7
5
VCE=5.0V
4
3
2
VCE=2.0V
10 ²
7
5
4
3
2
10 ¹
10 ⁰
Tj=25°C
Tj=125°C
2 3 4 5 7 10¹
2 3 4 5 7 10²
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10¹
7
5
4
3
2
VBE(sat)
10 ⁰
7
5
VCE(sat)
4
3
2
IB=0.4A
Tj=25°C
Tj=125°C
10 ^–1
10 ⁰ 2 3 4 5 7 10¹
2 3 4 5 7 10²
COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
10 ¹
7
5
4 _ts
3
2 _VCC=300V
IB1=–IB2=0.6A
10 ⁰
7 tf
5
4
ton
3
2
10 ^–1
10 ⁰
Tj=25°C
Tj=125°C
2 3 4 5 7 10¹
2 3 4 5 7 10²
COLLECTOR CURRENT IC (A)
Feb.1999