QM15TG-9B Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
50
Tj=25°C
40
30
IB=200mA
IB=100mA
20
IB=60mA
10
IB=20mA
IB=10mA
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10 ⁰
7 ^VCE=2.0V
5 ^Tj=25°C
4
3
2
10 ^–1
7
5
4
3
2
10 ^–2
0.8 1.2 1.6 2.0 2.4 2.8
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
4
3
IC=10A
2
IC=20A
1
Tj=25°C
Tj=125°C
0
10 ^–3 2 3 5 710 ^–2 2 3
IC=15A
5 710 ^–1 2 3 5 7 10 ⁰
BASE CURRENT IB (A)
MITSUBISHI TRANSISTOR MODULES
QM15TG-9B
MEDIUM POWER SWITCHING USE
INSULATED TYPE
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
2
10 ³
7
5
4
3
VCE=2.0V
2
Tj=25°C
Tj=125°C
VCE=5.0V
10 ²
7
5
4
3
2
10 ⁰
2 3 4 5 7 10¹
2 3 4 5 7 10²
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10 ¹
7
Tj=25°C
Tj=125°C
5
4
VBE(sat)
3
2
IB=60mA
10 ⁰
7
5
4
3
VCE(sat)
2
10 ^–1
10 ⁰ 2 3 4 5 7 10¹ 2 3 4 5 7 10²
COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
10 ¹
7
5
4 _ts
3
2
ton
10 ⁰
7
5
4
3
2
tf
10 ^–1
10 ⁰ 2 3 4 5 7 10¹
VCC=250V
IB1=90mA
IB2=–300mA
Tj=25°C
Tj=125°C
2 3 4 5 7 10²
COLLECTOR CURRENT IC (A)
Feb.1999