QM15DX-2H Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE

PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
50
Tj=25°C
40
30
IB=0.4A
IB=0.2A
20
IB=0.1A
IB=0.06A
10
IB=0.02A
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10 ¹
7 ^VCE=2.8V
5 ^Tj=25°C
4
3
2
10 ⁰
7
5
4
3
2
10 ^–1
1.8 2.2 2.6 3.0 3.4 3.8
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
4
3
2
IC=10A IC=15A
1
IC=5A
0
3 4 5 7 10^–2
Tj=25°C
Tj=125°C
2 3 4 5 7 10^–1 2 3
BASE CURRENT IB (A)
MITSUBISHI TRANSISTOR MODULES
QM15DX-2H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
2
10 ³
7
5
4
3
VCE=5.0V
2
10 ²
7
5
4
3
2
10 ⁰
VCE=2.8V
Tj=25°C
Tj=125°C
2 3 4 5 7 10¹
2 3 4 5 7 10²
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10 ¹
7
5
4
3
2
VBE(sat)
10 ⁰
7
VCE(sat)
5
4
3
2
IB=0.3A
Tj=25°C
10 ^–1
10 ⁰
Tj=125°C
2 3 4 5 7 10¹
2 3 4 5 7 10²
COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
2
10 ¹
ts
7
5
4
3
2
10 ⁰
7
5
4
3
2
10 ⁰
tf
ton
Tj=25°C
Tj=125°C
VCC=600V
IB1=–IB2=0.3A
2 3 4 5 7 10¹ 2 3 4 5 7 10²
COLLECTOR CURRENT IC (A)
Feb.1999