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| QM150DY-24K Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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PERFORMANCE CURVES
COMMON EMITTER OUTPUT
CHARACTERISTICS (TYPICAL)
200
IB=2A
160
IB=1A
IB=0.5A
120
IB=0.2A
80
IB=0.1A
40
Tj=25°C
0
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE VCE (V)
COMMON EMITTER INPUT
CHARACTERISTIC (TYPICAL)
10 1
7
5
4
3
2
VCE=2.8V
Tj=25°C
10 0
7
5
4
3
2
10 â1
1.8 2.2 2.6 3.0 3.4 3.8
BASE-EMITTER VOLTAGE VBE (V)
COLLECTOR-EMITTER SATURATION
VOLTAGE (TYPICAL)
5
IC=150A
4
3
IC=50A
2
IC=100A
1
Tj=25°C
Tj=125°C
0
10 â2 2 3 45 710 â1 2 3 4 5 7 10 0 2 3 45 7 10 1
BASE CURRENT IB (A)
MITSUBISHI TRANSISTOR MODULES
QM150DY-24K
HIGH POWER SWITCHING USE
INSULATED TYPE
DC CURRENT GAIN VS.
COLLECTOR CURRENT (TYPICAL)
10 4
7
5
3
2
VCE=5.0V
10 3
7
5
VCE=2.8V
3
2
10 2
7
5
Tj=25°C
3
2
Tj=125°C
10 1
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR CURRENT IC (A)
SATURATION VOLTAGE
CHARACTERISTICS (TYPICAL)
10 1
7
5
4
3
VBE(sat)
2
10 0
VCE(sat)
7
5
IB=3A
4
Tj=25°C
3
Tj=125°C
2
10 â1
101 2 3 4 5 7 102 2 3 4 5 7 103
COLLECTOR CURRENT IC (A)
SWITCHING TIME VS. COLLECTOR
CURRENT (TYPICAL)
10 2
7
5
3
2
10 1
ts
7
5
3
2
tf
10 0
7
5
VCC=600V
3
2
10 â1
ton
IB1=âIB2=3A
Tj=25°C
Tj=125°C
10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR CURRENT IC (A)
Feb.1999
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