PM75CLB060 Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – FLAT-BASE TYPE INSULATED PACKAGE

MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CLB060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Symbol
VCC(PROT)
VCC(surge)
TC
Tstg
Viso
Parameter
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Isolation Voltage
Condition
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = +125°C Start
Applied between : P-N, Surge value
(Note-1)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
(Note-1) Tc (base plate) measurement point is below.
Ratings
400
500
–20 ~ +100
–40 ~ +125
2500
Unit
V
V
°C
°C
Vrms
Top view
Tc
THERMAL RESISTANCES
Symbol
Parameter
Condition
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(c-f)
Junction to case Thermal
Resistances
Contact Thermal Resistance
Inverter IGBT part (per 1/6)
Inverter FWDi part (per 1/6)
Inverter IGBT part (per 1/6)
Inverter FWDi part (per 1/6)
Case to fin, (per 1 module)
Thermal grease applied
* If you use this value, Rth(f-a) should be measured just under the chips.
Min.
(Note-2) _—
(Note-2) _—
(Note-1) _—
(Note-1) _—
(Note-1)
—
Limits
Typ.
—
—
—
—
—
(Note-2) Tc (under the chip) measurement point is below.
arm
UP
VP
WP
axis
IGBT FWDi IGBT FWDi IGBT FWDi
X
28.7 28.7 65.2 65.2 85.3 85.3
Y
–6.6 0.8 –6.6 2.5 –6.6 2.5
UN
IGBT FWDi
38.0 38.0
4.6 –4.5
VN
IGBT FWDi
55.4 55.4
4.6 –4.5
(unit : mm)
WN
IGBT FWDi
75.5 75.5
4.6 –4.5
Max.
0.32*
0.53*
0.42
0.69
0.038
Unit
°C/W
Bottom view
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Switching Time
Collector-Emitter
Cutoff Current
Condition
Min.
VD = 15V, IC = 75A
Tj = 25°C
—
VCIN = 0V, Pulsed
(Fig. 1) Tj = 125°C
—
–IC = 75A, VD = 15V, VCIN = 15V
(Fig. 2) —
VD = 15V, VCIN = 0V↔15V
VCC = 300V, IC = 75A
Tj = 125°C
Inductive Load
0.5
—
—
—
(Fig. 3,4)
—
Tj = 25°C
—
VCE = VCES, VCIN = 15V
(Fig. 5) _{Tj = 125°C}
—
Limits
Typ.
1.6
1.5
2.2
1.0
0.2
0.4
1.2
0.5
—
—
Unit
Max.
2.1
2.0
V
3.3
V
2.4
0.4
1.0
µs
2.5
1.0
1
10
mA
Apr. 2004