PM75CBS060 Datasheet, PDF (3/6 Pages) Powerex Power Semiconductors – Intellimod™ Module MAXISS Series™ Multi AXIS Servo IPM (75 Amperes/600 Volts)

MITSUBISHI <INTELLIGENT POWER MODULES>
PM75CBS060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Symbol
VCC(PROT)
VCC(surge)
TC
Tstg
Parameter
Supply Voltage Protected by
OC & SC
Supply Voltage (Surge)
Module Case Operating
Temperature
Storage Temperature
Viso
Isolation Voltage
Conditions
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = 125°C Start
Applied between : P-N, Surge value
(Note-1)
60Hz, Sinusoidal
Charged part to Base, AC 1 min.
(Note-1) Tc(under the chip) measurement point is below.
Ratings
400
500
–20 ~ +110
–40 ~ +125
2500
Unit
V
V
°C
°C
Vrms
Arm
Axis
X
Y
UP
IGBT FWDi
83.3
83.3
3.8
–4.3
VP
IGBT FWDi
41.8
41.8
3.8
–4.3
WP
IGBT FWDi
16.8
16.8
3.8
–4.3
UN
IGBT FWDi
70.8
70.8
–2.3 –10.3
VN
IGBT FWDi
54.3
54.3
–2.3 –10.3
(Unit : mm)
WN
IGBT FWDi
29.3
29.3
–2.3 –10.3
Bottom view
Y
X
–Y
P
N
U
V
W
THERMAL RESISTANCES
Symbol
Parameter
Test Conditions
Min.
Rth(j-c’)Q _{Junction to case Thermal}
Tc measured point is just under the chips Inverter IGBT
part (per 1/6 module)
—
Resistances
Rth(j-c’)F
Tc measured point is just under the chips Inverter
FWDi part (per 1/6 module)
—
Case to fin, (per 1 module)
Rth(c-f)
Contact Thermal Resistance _{Thermal grease applied}
—
*: If you use this value, Rth(f-a) should be measured just under the chips.
Limits
Typ.
—
Max.
0.27*
Unit
°C/W
—
0.47* °C/W
—
0.046 °C/W
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Switching Time
Collector-Emitter
Cutoff Current
Test Conditions
VD = 15V, IC = 75A
Tj = 25°C
VCIN = 0V, Pulsed (Fig. 1) Tj = 125°C
–IC = 75A, VD = 15V, VCIN = 15V
VD = 15V, VCIN = 15V↔0V
VCC = 300V, IC = 75A
Tj = 125°C
Inductive Load
Tj = 25°C
VCE = VCES, VD = 15V (Fig. 4) _{Tj = 125°C}
Min.
—
—
(Fig. 2) —
0.8
—
—
—
(Fig. 3)
—
—
—
Limits
Typ.
1.7
1.7
2.2
1.2
0.15
0.4
2.4
0.5
—
—
Unit
Max.
2.3
2.3
V
3.3
V
2.4
µs
0.3
µs
1.0
µs
3.3
µs
1.0
µs
1
10
mA
Sep. 2001