PM50B5LB060 Datasheet, PDF (3/10 Pages) Mitsubishi Electric Semiconductor – FLAT-BASE TYPE INSULATED PACKAGE

MITSUBISHI <INTELLIGENT POWER MODULES>
PM50B5LB060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Symbol
VCC(PROT)
VCC(surge)
Tstg
Viso
Parameter
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Condition
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = +125°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
Ratings
450
500
–40 ~ +125
2500
Unit
V
V
°C
Vrms
THERMAL RESISTANCES
Symbol
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)F
Parameter
Junction to case Thermal
Resistances
Rth(c-f) Contact Thermal Resistance
Condition
Inverter IGBT part (per 1/4 module)
Inverter FWDi part (per 1/4 module)
Converter IGBT part
Converter FWDi upper part
Converter FWDi lower part
Case to fin, (per 1 module)
Thermal grease applied
Min.
(Note-1) _—
(Note-1) _—
(Note-1) _—
(Note-1) _—
(Note-1) _—
(Note-1)
—
(Note-1) Tc (under the chip) measurement point is below.
(unit : mm)
arm
UP
VP
WP
UN
VN
WN
axis
IGBT FWDi IGBT FWDi FWDi IGBT FWDi IGBT FWDi IGBT FWDi
X
32.7 32.2 62.8 63.3 82.9 38.8 39.3 53.0 52.5 75.6 75.1
Y
–10.0 –0.2 –8.8 –2.0 –8.4 8.0 0.8 3.8 –2.8 3.8 –2.8
Limits
Typ.
—
—
—
—
—
—
Max.
0.95
1.61
0.95
0.95
1.61
0.038
Unit
°C/W
Bottom view
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Switching Time
Collector-Emitter
Cutoff Current
Condition
Min.
VD = 15V, IC = 50A
Tj = 25°C
—
VCIN = 0V
(Fig. 1) Tj = 125°C
—
–IC = 50A, VD = 15V, VCIN = 15V
(Fig. 2) —
VD = 15V, VCIN = 0V↔15V
VCC = 300V, IC = 50A
Tj = 125°C
Inductive Load
0.3
—
—
—
(Fig. 3,4)
—
Tj = 25°C
—
VCE = VCES, VCIN = 15V
(Fig. 5) _{Tj = 125°C}
—
Limits
Typ.
1.7
1.55
2.2
0.7
0.1
0.2
0.9
0.2
—
—
Unit
Max.
2.3
2.0
V
3.3
V
1.4
0.2
0.4
µs
1.8
0.4
1
10
mA
Oct. 2005