PM450CLA120 Datasheet, PDF (3/8 Pages) Mitsubishi Electric Semiconductor – INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE

MITSUBISHI <INTELLIGENT POWER MODULES>
PM450CLA120
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Symbol
VCC(PROT)
VCC(surge)
Tstg
Viso
Parameter
Supply Voltage Protected by
SC
Supply Voltage (Surge)
Storage Temperature
Isolation Voltage
Condition
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = +125°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
Ratings
800
1000
–40 ~ +125
2500
Unit
V
V
°C
Vrms
THERMAL RESISTANCES
Symbol
Rth(j-c)Q
Rth(j-c)F
Parameter
Junction to case Thermal
Resistances
Rth(c-f)
Contact Thermal Resistance
Condition
Inverter IGBT (per 1 element)
Inverter FWDi (per 1 element)
Case to fin, (per 1 module)
Thermal grease applied
Min.
(Note-1) _—
(Note-1) _—
(Note-1)
—
Limits
Typ.
—
—
—
(Note-1) Tc measurement point is just under the chip.
If you use this value, Rth(f-a) should be measured just under the chips.
Table 1: TC (under the chip) measurement point is below.
arm
axis
X
Y
UP
IGBT FWDi
30.1 19.2
82.7 82.7
VP
IGBT FWDi
80.1 69.2
82.7 82.7
WP
IGBT FWDi
130.1 119.2
82.7 82.7
UN
IGBT FWDi
19.8 30.7
27.2 27.2
VN
IGBT FWDi
69.8 80.7
27.2 27.2
(Unit : mm)
WN
IGBT FWDi
119.8 130.7
27.2 27.2
Max.
0.05
0.09
0.014
Unit
°C/W
7
13
Name
plate
side
Bottom
view
Y
X
6
1
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Switching Time
Collector-Emitter
Cutoff Current
Condition
Min.
VD = 15V, IC = 450A
Tj = 25°C
—
VCIN = 0V
(Fig. 1) Tj = 125°C
—
–IC = 450A, VD = 15V, VCIN = 15V
(Fig. 2) —
VD = 15V, VCIN = 0V↔15V
VCC = 600V, IC = 450A
Tj = 125°C
Inductive Load
0.5
—
—
—
(Fig. 3, 4)
—
Tj = 25°C
—
VCE = VCES, VCIN = 15V
(Fig. 5) _{Tj = 125°C}
—
Limits
Typ.
1.8
1.9
2.8
1.0
0.5
0.4
2.3
0.7
—
—
Unit
Max.
2.3
2.4
V
3.9
V
2.5
0.8
1.0
µs
3.5
1.2
1
10
mA
Jul. 2005