MGF4934CM Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)

Apr./2008
MITSUBISHI SEMICONDUTOR <GaAs FET>
MGF4934CM
SUPER LOW NOISE InGaAs HEMT (4pin flat lead package)
TYPICAL CHARACTERISTICS (Ta=25°C)
ID vs. VDS
(VGS=~0.1V/STEP)
50
40
30
20
10
0
-1
-0.5
0
Gate to Source Voltage, VGS (V)
ID vs. VGS
(VDS=2V)
50
40
30
20
10
0
0
1
2
3
4
Drain to Source Voltage, VDS (V)
NF & Gs vs. ID
2.20
2.00 ^Ta=25℃
VDS=2V
1.80 ^Freq=12GHz
1.60
Gs
1.40
1.20
1.00
0.80
0.60
NF
0.40
0.20
0.00
0
5
10
15
Drain Current, ID (mA)
15
14
13
12
11
10
9
8
7
6
5
4
20
MITSUBISHI
(3/5)