MGF0904A_11 Datasheet, PDF (3/4 Pages) Mitsubishi Electric Semiconductor – High-power GaAs FET (small signal gain stage)

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MGF0904A
L & S BAND / 0.6W
non - matched
MGF0904A S-parameters( Ta=25deg.C , VDS=8(V),IDS=200(mA) )
S11,S22 vs. f
S21,S12 vs. f
f
(GHz)
0.5
1.0
1.5
2.0
2.5
3.0
S11
Magn.
Angle(deg.)
0.851
0.801
0.788
0.740
0.713
0.670
-99.0
-138.0
-161.5
-177.0
176.5
171.5
S21
Magn.
Angle(deg.)
6.855
4.265
3.192
2.544
2.180
2.040
116.0
89.0
71.0
52.0
30.0
9.0
S Parameters(Typ.)
S12
Magn.
Angle(deg.)
0.055
0.064
0.072
0.079
0.085
0.091
31.0
22.5
13.0
4.0
-7.0
-18.0
S22
Magn.
Angle(deg.)
0.338
0.368
0.390
0.409
0.411
0.402
-149.0
-162.0
-173.3
-178.0
177.0
172.0
K
-
0.277
0.521
0.655
0.847
0.940
1.070
MSG/MAG
dB
21.0
18.2
16.5
15.1
14.1
11.9
Publication Date : Apr., 2011
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